ZXMN3A04K
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters
Min Max
Inches
Min Max
DIM
Millimeters
Min Max
Inches
Min Max
A
2.18
2.38
0.086
0.094
e
2.30 BSC
0.090 BSC
A1
0.127
0.005
H
9.40
10.41
0.370
0.410
b
0.635
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
b3
0.762
5.20
1.114
5.46
0.030
0.205
0.045
0.215
L1
L2
2.74 REF
0.051 BSC
0.108 REF
0.020 BSC
c
c2
D
D1
E
0.457
0.457
5.97
5.20
6.35
0.609
0.584
6.22
6.73
0.018
0.018
0.235
0.205
0.250
0.024
0.023
0.245
0.265
L3
L4
L5
1
0.89
0.635
1.14
0
0
1.27
1.01
1.52
10
15
0.035
0.025
0.045
0
0
0.050
0.040
0.060
10
15
E1
4.32
0.170
? Zetex plc 2004
Europe
Zetex GmbH
Streitfeldstra?e 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquaters
Zetex plc
Fields New Road, Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
ISSUE 1 - FEBRUARY 2004
www.zetex.com
7
SEMICONDUCTORS
相关PDF资料
ZXMN3A06DN8TC MOSFET DUAL N-CHAN 30V 8SOIC
ZXMN3A14FTA MOSFET N-CH 30V 3.2A SOT23-3
ZXMN3AM832TA MOSFET N-CHAN DUAL 30V 8MLP
ZXMN3AMCTA MOSFET 2N-CH 30V 2.9A DFN
ZXMN3B01FTA MOSFET N-CHAN 30V 2A SOT23-3
ZXMN3B04N8TC MOSFET N-CHAN 30V 8SOIC
ZXMN3B14FTA MOSFET N-CHAN 30V 3.5A SOT23-3
ZXMN3F30FHTA MOSFET N-CHAN 30V SOT23-3
相关代理商/技术参数
ZXMN3A05N8TA 功能描述:MOSFET N-CH 30V 12A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ZXMN3A06DN8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A06DN8_02 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A06DN8TA 功能描述:MOSFET Dl 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A06DN8TC 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A06N8TA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN3A14F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23
ZXMN3A14FTA 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube